Development of Backside SCM Technique
for Advanced SOI Microprocessors

Live, online, Tuesday June 30th, 8-9am from Singapore

Monday June 29th, from 5-6pm U.S. California (check time in your area)

Vinod presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices to delineate site-specific implant related issues for advanced microprocessors. The challenges include sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Also included in his presentation: optimization of plasma etching of buried oxide, followed by a new method of growing thin oxide using UV/ozone. Case studies are shown highlighting the capability of backside SCM technique.

Vinod Narang bio available here.