Application Notes
- Electrical Characterization of a Transistor using the MultiScan™ Atomic Force Probe (AFP)
- ...What is needed is a way to probe such structures using a tool that does not require construction of probe pads and difficult sample preparation nor does it expose the sample to charged beams. The results below demonstrate that the MultiProbe AFP is capable of performing these measurements.
- PicoCurrent™ imaging using the MultiScan™ Atomic Force Probe
- The AFP provides a low leakage electrical connection to the probe tip and the tip may be biased and current recorded together with the standard topographical micrograph.
- Technical information to the MP II head
- This note provives a detailed introduction to the MP II probing head.
- MultiProbe’s Scanning Capacitance Microscopy
- Since its commercialization Scanning Capacitance Microscopy (SCM) has become the preferred technique for imaging dopant variations in semiconductor devices. SCM is used to measure implant profiles and to develop semiconductor processes. In contrast with PicoCurrent, which is effective in measuring resistivity, the SCM module is more sensitive to dopant and charge in the sample.
- Comparison of AFP and other probing techniques
- There are three main techniques in use for nanoprobing: AFP, SEM/FIB prober, and FIB Wiring Pads. The most widely used of these is Focused Ion Beam wiring of probing pads. This note provives a table listing the advantages and disadvantages of each technique.
- More notes to come...