Technical Publications

Electrical Characterization of sub-30nm Gatelength SOI MOSFETs: Terence Kane and Michael P. Tenney, IBM Microelectronics, Hopewell Junction, NY
Current Image Atomic Force Microscopy (CI-AFM) combined with Atomic Force Probing (AFP) for location and characterization of advanced technology node.: Tom X. Tong, Intel Corporation, Hillsboro, OR
A. N Erickson, MultiProbe, Inc. Santa Barbara, CA
Advanced electrical analysis of embedded memory cells using Atomic Force Probing: M. Grützner, Department of Failure Analysis, Infineon Technologies AG, Munich, Germany
Combination of SCM/SSRM analysis and Nanoprobing technique for soft single bit failure analysis: Larry Liu, Yuguo Wang, Hal Edwards, David Sekel, and Dan Corum, Texas Instruments Inc. Dallas, TX
Atomic Force Probing in Analog MOSFETs Measurement: Kaiyuan Chen, Tathagata Chatterjee, Kim Christensen, Juan Rosal and Hal Edwards, Texas Instruments Inc, Dallas, TX, USA
Focused Ion Beam Method for Reconditioning Worn Tungsten Atomic Force Probe Tips: Randal Mulder, Sam Subramanian, Tony Chrastecky, Freescale Semiconductor, Inc; 6501 William Cannon Drive, Austin, TX, USA
Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing: David M. Shuttleworth*, Agere Systems, Orlando, Florida
Mary Drummond Roby, Texas Instruments, Dallas, Texas
Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy: Jon C. Lee, J. H. Chuang, Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, Taiwan
Scanning Capacitance Microscopy at transistor contact level: Kartik Ramanujachar, Texas Instruments, 12203 South West Freeway, Stafford, Texas, USA
Dislocation related Leakage in Advanced CMOS devices: Frank Siegelin and Anton Stuffer Infineon Technologies AG, Munich, Germany
A New Approach for SRAM Soft Defect Root Cause Identification: Peter Egger, Stefan Miiller, Martin Stiftinger lnfineon Technologies, Otto-Hahn-Ring 6, 81739 Munich, Germany
Challenges of Atomic Force Probe Characterization of Logic Based Embedded DRAM for On-Processor Applications: Terence Kane, Michael P. Tenney, IBM Systems and Technology Group, Hopewell Junction, New York. Andrew Erickson, Sebastien Phan, Multiprobe, Inc. Santa Barbara, California
Alternating Plane-View and Cross-Section Scanning Capacitance Microscope Technique to Reveal Various Implant Issue: Tsan-Chang Chuang, Cha-Ming Shen, Shi-Chen Lin , Chen-May Huang, Jin-Hong Chou, Jon C.Lee Taiwan Semiconductor Manufacture Company, Ltd., Taiwan. 1,Nan-Ke N, Rd., Tainan Science Park, Tainan, Taiwan 741-44, R.O.C.
Single Device Characterization by Nano-probing to Identify Failure Root Cause: Chao-Chi Wu, Jon C. Lee, Jung-Hsiang Chuang, Tsung-Te Li, Taiwan Semiconductor Manufacturing Company, Ltd. 6, Creation Rd. 2, Science-Based Industrial Park, Hsin -Chu, Taiwan 300, R. O. C.
Couple Passive Voltage Contrast with Scanning Probe Microscope to Identify Invisible Implant Issue: Cha-Ming Shen, Shi-Chen Lin, Chen-May Huang, Huay-Xan Lin, Chi-Hong Wang Taiwan Semiconductor Manufacture Company, Ltd., Taiwan
EEPROM Failure Analysis Methodology: Can Programmed Charges Be Measured Directly by Electrical Techniques of Scanning Probe Microscopy?: Christophe De Nardi, Romain Desplats, Philippe Perdu CNES, French Space Agency, DCT/AQ/LE, Toulouse, France
Investigation on the Influence of Focused Electron Beam on Electrical Characteristics of Integrated Devices: S. Doering, R. Harzer, W. Werner Qimonda Dresden GmbH & Co. OHG, Dresden, Germany
Combining the Nano-Probing Technique with Mathematics to Model and Identify Non-Visual Failures: Cha-Ming Shen, Tsan-Chen Chuang, Shi-Chen Lin, Lian-Fon Wen, Chen-May Huang Taiwan Semiconductor Manufacture Company, Ltd., Taiwan
Analysis of DC Failure in Advanced Memory Devices Using Nanoprobing and Scanning Capacitance Microscopy: Jen-Lang Lue, Chin-Shun Lin, Atup Chiou, Hsuen-Cheng Liao, Hsienwen Liu, Brian Pai, Sam Fan and Tings Wang ProMOS Technologies Inc., Hsinchu, Taiwan, R. O. C.
MAXIMUM PERMISSIBLE EB ACCELERATION VOLTAGE FOR SEM-BASED INSPECTION BEFORE ELECTRICAL CHARACTERIZATION OF ADVANCED MOS: Takayuki Mizuno, Miho Takahashi, Yoshie Azuma, Hiroshi Yanagita, Kyoichiro Asayama, Koji Nakamae* Renesas Technology Corp., 5-20-1 Josuihon-cho, Kodaira-shi, Tokyo, 187-8588, Japan Osaka Univ., 2-1 Yamada-oka, Suita-shi, Osaka, 565-0871, Japan
Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis: Yu-Ching Yeh*, Chia-Lung Lin, Bi-Jen Chen, Yuan-Wei Tseng, Jeremy D. Russell Physical Failure Analysis Department, Inotera Memories, Inc. No.667, Fuhsing 3rd Rd., Kueishan Township, Taoyuan County 333, Taiwan, Republic of China
Direct Measurements of Charge in Floating Gate Transistor Channels of Flash Memories Using Scanning Capacitance Microscopy: Christophe De Nardi, Romain Desplats, Philippe Perdu. CNES, French Space Agency, DCT/AQ/LE, Toulouse, France. Christophe Guérin DGA/CELAR, French Defense Department, Bruz, France. Jean Luc Gauffier, Thomas B. Amundsen LNMO, INSA Génie Physique, Toulouse, France
Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors: Vinod Narang, P Muthu, JM Chin. Device Analysis Laboratory, 508, Chai Chee Lane, AMD Singapore 469032
Case Studies in Atomic Force Probe Analysis: Randal Mulder, Sam Subramanian, Tony Chrastecky Freescale Semiconductor, Inc; 6501 William Cannon Drive, Austin, TX 78735
Conductive Atomic Force Microscopy Application for Semiconductor Failure Analysis in Advanced Nanometer Process: Kun Lin, Hang Zhang United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C. Shey-shi Lu Graduate Institute of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C
Deformation Study of Low K Dielectric after E-beam Exposure: Xianfeng Chen, Qiang Gao, Ming Li, Chorng Niou, W.T. Kary Chien SMIC (Shanghai) Corp.18 Zhangjiang Road, Pudong, Shanghai, China, 201203
The Electrical Characterization and Physical Failure Analysis For Transistor Gate Leakage: Tsung-Te Li, Chao-Chi Wu, Jung-Hsiang Chuang, Jon C. Lee Taiwan Semiconductor Manufacturing Company, Ltd. 6, Creation Rd.2, Science-Based Industrial Park, Hsin-Chu, Taiwan 300, R.O.C.
Atomic Force Probe Kelvin Measurements of Large MOSFET Devices at Contact Level for Accurate Device Threshold Characteristics: Terence Kane, Michael P. Tenney IBM STG, Fishkill, New York Andrew Erickson, Sebastien Phan Multiprobe, Inc.
Atomic Force Probe Analysis of Non-Visible Defects in Sub-100nm CMOS Technologies: Randal Mulder, Sam Subramanian, Tony Chrastecky Freescale Semiconductor, Inc; 6501 William Cannon Drive, Austin, TX 78735